SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-ARSENIDE

被引：46

作者：

ZALM, PC ^{[1
]}

MAREE, PMJ ^{[1
]}

OLTHOF, RIJ ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.95552

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：597 / 599

页数：3

共 11 条

[1] THE USE OF PULSED LASER IRRADIATION IN SILICON MOLECULAR-BEAM EPITAXY - A COMPARATIVE LOW-ENERGY ELECTRON-DIFFRACTION STUDY [J].

DEJONG, T ;

DOUMA, WAS ;

SMIT, L ;

KORABLEV, VV ;

SARIS, FW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :888-898

[2] SOLID-PHASE EPITAXY OF SILICON ON GALLIUM-PHOSPHIDE [J].

DEJONG, T ;

SARIS, FW ;

TAMMINGA, Y ;

HAISMA, J .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :445-446

[3] SILICON MOLECULAR-BEAM EPITAXY ON GALLIUM-PHOSPHIDE [J].

DEJONG, T ;

DOUMA, WAS ;

VANDERVEEN, JF ;

SARIS, FW ;

HAISMA, J .

APPLIED PHYSICS LETTERS, 1983, 42 (12) :1037-1039

[4] LEED AND AES STUDIES OF THE INITIAL GROWTH OF GE EPILAYERS ON GAAS(100) [J].

MRSTIK, BJ .

SURFACE SCIENCE, 1983, 124 (01) :253-266

[5] GROWTH AND PATTERNING OF GAAS/GE SINGLE-CRYSTAL LAYERS ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

SHELDON, P ;

JONES, KM ;

HAYES, RE ;

TSAUR, BY ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :274-276

[6] MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS ON SI [J].

TSAUR, BY ;

METZE, GM .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :535-536

[7] EXPERIMENTAL-DETERMINATION OF CORRELATION BETWEEN LEED PATTERN AND GA-AS BOND VECTORS IN SURFACE OF GAAS(001) [J].

VANBOMMEL, AJ ;

CROMBEEN, JE .

SURFACE SCIENCE, 1976, 57 (01) :437-440

[8] THE ADSORPTION OF AG ON THE SI(111) 7 X 7 SURFACE AT ROOM-TEMPERATURE STUDIED BY MEDIUM ENERGY ION-SCATTERING, LEED AND AES [J].

VANLOENEN, EJ ;

IWAMI, M ;

TROMP, RM ;

VANDERVEEN, JF .

SURFACE SCIENCE, 1984, 137 (01) :1-22

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J].

WANG, WI .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1149-1151

[10] FERMI-LEVEL PINNING BY MISFIT DISLOCATIONS AT GAAS INTERFACES [J].

WOODALL, JM ;

PETTIT, GD ;

JACKSON, TN ;

LANZA, C ;

KAVANAGH, KL ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1983, 51 (19) :1783-1786

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