EQUILIBRIUM CRYSTAL SHAPE OF SILICON NEAR (001)

被引：14

作者：

TERSOFF, J ^{[1
]}

PEHLKE, E ^{[1
]}

机构：

[1] FRITZ HABER INST,W-1000 BERLIN 33,GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.47.4072

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the equilibrium shape of a silicon crystal at orientations near (001), both at T = 0 and at elevated temperature. Comparison with recent experiments shows that several topographic features observed on Si directly reflect the equilibrium shape. In particular, our results resolve an apparent discrepancy between theory and experiment, regarding faceting between regions of single-layer and double-layer steps.

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页码：4072 / 4075

页数：4

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