BAND-EDGE DISCONTINUITIES BETWEEN MICROCRYSTALLINE AND AMORPHOUS HYDROGENATED SILICON ALLOYS AND THEIR EFFECT ON SOLAR-CELL PERFORMANCE

被引：52

作者：

XU, X ^{[1
]}

YANG, J ^{[1
]}

BANERJEE, A ^{[1
]}

GUHA, S ^{[1
]}

VASANTH, K ^{[1
]}

WAGNER, S ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 16期

关键词：

D O I：

10.1063/1.114332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used internal photoemission measurements to determine the electrical band gap of microcrystalline p-type layers used in a-Si:H alloy solar cells, and the band edge discontinuities of the conduction and the valence bands between mu c-Si:H and a-Si:H alloys. The band gap of mu c-Si:H is found to be around 1.6 eV, and the discontinuities at the conduction and the valence band edges are -0.02 and 0.26 eV, respectively. Use of these parameters in the numerical simulation of single-junction a-Si:H alloy solar cells is found to accurately predict the experimental results of solar cell performance. (C) 1995 American Institute of Physics.

引用

页码：2323 / 2325

页数：3

共 15 条

[1] COMPUTER-ANALYSIS OF THE ROLE OF P-LAYER QUALITY, THICKNESS, TRANSPORT MECHANISMS, AND CONTACT BARRIER HEIGHT IN THE PERFORMANCE OF HYDROGENATED AMORPHOUS-SILICON P-I-N SOLAR-CELLS [J].