QUANTIZED CONDUCTANCE IN INGAAS POINT CONTACTS AT HIGH-TEMPERATURES

被引：8

作者：

BEVER, T

HIRAYAMA, Y

TARUCHA, S

机构：

[1] NTT Basic Research Laboratories, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 6A期

关键词：

QUANTIZED CONDUCTANCE; INGAAS/INALAS HETEROSTRUCTURE; FOCUSED ION BEAM; INSULATION WRITING; INPLANE GATE;

D O I：

10.1143/JJAP.33.L800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used focused ion beam insulation writing to fabricate quantum point contacts in the two-dimensional electron gas of an InGaAs/InAlAs heterostructure. The conductance as a function of voltage on an adjacent in-plane gate exhibited steps for temperatures up to 60 K. From the temperature and source-drain voltage and magnetic field dependence of the conductance steps, we estimated the one-dimensional subband spacing to be 15 meV.

引用

页码：L800 / L803

页数：4

共 18 条

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