MODULATION-DOPED HGCDTE QUANTUM-WELL STRUCTURES AND SUPERLATTICES GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY

被引：4

作者：

SCHETZINA, JF ^{[1
]}

HAN, JW ^{[1
]}

LANSARI, Y ^{[1
]}

GILES, NC ^{[1
]}

YANG, Z ^{[1
]}

HWANG, S ^{[1
]}

COOK, JW ^{[1
]}

OTSUKA, N ^{[1
]}

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(90)90931-A

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the results of the first systematic study of modulation doping in HgCdTe. The doped multilayers were grown by means of photoassisted molecular beam epitaxy, in which the substrate is illuminated during the film growth process to enhance dopant activation. Indium was used as the n-type dopant and arsenic was used as the p-type dopant. More than forty modulation-doped samples were prepared and studied. © 1989.

引用

页码：23 / 32

页数：10

共 11 条

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