P-TYPE MODULATION-DOPED HGCDTE

被引：14

作者：

HAN, JW ^{[1
]}

HWANG, S ^{[1
]}

LANSARI, Y ^{[1
]}

HARPER, RL ^{[1
]}

YANG, Z ^{[1
]}

GILES, NC ^{[1
]}

COOK, JW ^{[1
]}

SCHETZINA, JF ^{[1
]}

SEN, S ^{[1
]}

机构：

[1] SANTA BARBARA RES CTR, GOLETA, CA 93017 USA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.100836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：63 / 65

页数：3

共 10 条

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[5]

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[6] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7099-7101

[7]

HARPER RL, 1989, APPL PHYS LETT, V54

[8] GROWTH OF HGCDTE AND OTHER HG-BASED FILMS AND MULTILAYERS BY MOLECULAR-BEAM EPITAXY [J].

HARRIS, KA ;

HWANG, S ;

BLANKS, DK ;

COOK, JW ;

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OTSUKA, N .

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[9]

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[10] CONTROLLED P-TYPE IMPURITY DOPING OF HG1-XCDX TE DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

WROGE, ML ;

PETERMAN, DJ ;

MORRIS, BJ ;

LEOPOLD, DJ ;

BROERMAN, JG ;

FELDMAN, BJ .

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