THE DOPING OF MERCURY CADMIUM TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY

被引：54

作者：

BOUKERCHE, M

WIJEWARNASURIYA, PS

SIVANANTHAN, S

SOU, IK

KIM, YJ

MAHAVADI, KK

FAURIE, JP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.575610

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2830 / 2833

页数：4

共 22 条

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[8] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF CD1-XZNXTE, HG1-XCDXTE,HG1-XMNXTE, AND HG1-XZNXTEONGAAS(100) [J].

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