CONTROLLED P-TYPE IMPURITY DOPING OF HG1-XCDX TE DURING GROWTH BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

WROGE, ML

PETERMAN, DJ

MORRIS, BJ

LEOPOLD, DJ

BROERMAN, JG

FELDMAN, BJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.575609

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2826 / 2829

页数：4

共 13 条

[1] (100) AND (111) ORIENTED CDTE GROWN ON (100) ORIENTED GAAS BY MOLECULAR-BEAM EPITAXY [J].

BALLINGALL, JM ;

WROGE, ML ;

LEOPOLD, DJ .

APPLIED PHYSICS LETTERS, 1986, 48 (19) :1273-1275

[2] GROWTH OF HIGH MOBILITY N-TYPE CDTE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

GILES, NC ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1095-1097

[3] PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

GILES, NC ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1735-1737

[4] ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY PRODUCED HGCDTE LAYERS DOPED DURING GROWTH [J].

BOUKERCHE, M ;

WIJEWARNASURIYA, PS ;

RENO, J ;

SOU, IK ;

FAURIE, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2072-2076

[5] THE BEHAVIOR OF SELECTED IMPURITIES IN CDXHG1-XTE [J].

CAPPER, P .

JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :280-299

[6] CALCULATION OF THE AUGER LIFETIME IN PARA-TYPE HG1-XCDXTE [J].

CASSELMAN, TN .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :848-854

[7]

Crank J., 1975, MATH DIFFUSION, V2nd

[8] THE BEHAVIOR OF DOPED HG1-XCDXTE EPITAXIAL LAYERS GROWN FROM HG-RICH MELTS [J].

KALISHER, MH .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :365-372

[9] P-ON-N HETEROJUNCTIONS OF (HG,CD)TE BY MOLECULAR-BEAM EPITAXY - CONTROLLED SILVER DOPING AND COMPOSITIONAL GRADING [J].

PETERMAN, DJ ;

WROGE, ML ;

MORRIS, BJ ;

LEOPOLD, DJ ;

BROERMAN, JG .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (06) :1951-1954

[10]

PETERSEN PE, 1981, SEMICONDUCT SEMIMET, V18, P121

← 1 2 →