OPTICALLY DETECTED MAGNETIC-RESONANCE OF NATIVE DEFECTS IN ALXGA1-XAS

[1] PHOTOLUMINESCENCE KILLER CENTER IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2833 - 2836

[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[3] EPR STUDIES ON A1XGA1-XAS MIXED-CRYSTALS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 58 (01): : K23 - K26

[4] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3484 - 3491

[5] ODMR STUDIES OF RECOMBINATION EMISSION IN II-VI-COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 317 - 325

[6] THE EFFECT OF THE OXYGEN CONCENTRATION ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS FILMS GROWN BY MBE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 703 - 703

[7] NEW OMNIPRESENT ELECTRON-PARAMAGNETIC RESONANCE SIGNAL IN AS-GROWN SEMIINSULATING LIQUID ENCAPSULATION CZOCHRALSKI GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1254 - 1256

[8] ESR ASSESSMENT OF 3D7 TRANSITION-METAL IMPURITY STATES IN GAP, GAAS AND INP [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 1113 - 1116

[9] KAUFMANN U, 1977, SOLID STATE COMMUN, V25, P1073

[10] FINE-STRUCTURE OF A DEEP PHOTOLUMINESCENCE BAND RELATED TO OXYGEN IN LEC-GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L878 - L880

[1] PHOTOLUMINESCENCE KILLER CENTER IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2833 - 2836

[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[3] EPR STUDIES ON A1XGA1-XAS MIXED-CRYSTALS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 58 (01): : K23 - K26

[4] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3484 - 3491

[5] ODMR STUDIES OF RECOMBINATION EMISSION IN II-VI-COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 317 - 325

[6] THE EFFECT OF THE OXYGEN CONCENTRATION ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS FILMS GROWN BY MBE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 703 - 703

[7] NEW OMNIPRESENT ELECTRON-PARAMAGNETIC RESONANCE SIGNAL IN AS-GROWN SEMIINSULATING LIQUID ENCAPSULATION CZOCHRALSKI GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1254 - 1256

[8] ESR ASSESSMENT OF 3D7 TRANSITION-METAL IMPURITY STATES IN GAP, GAAS AND INP [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (12) : 1113 - 1116

[9] KAUFMANN U, 1977, SOLID STATE COMMUN, V25, P1073

[10] FINE-STRUCTURE OF A DEEP PHOTOLUMINESCENCE BAND RELATED TO OXYGEN IN LEC-GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L878 - L880