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CW SILICON TRAPATT OPERATION

被引：5
作者：
EVANS, WJ
IGLESIAS, DE
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1970年 / 58卷 / 02期
关键词：
D O I：
10.1109/PROC.1970.7625
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：285 / +
页数：1
相关论文
共 7 条
[1]   DEVICE PHYSICS OF TRAPATT OSCILLATORS [J].
DELOACH, BC ;
SCHARFETTER, DL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :9-+
[2]  
EDWARDS R, 1969 INT EL DEV M WA
[3]   CIRCUITS FOR HIGH-EFFICIENCY AVALANCHE-DIODE OSCILLATORS [J].
EVANS, WJ .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1969, MT17 (12) :1060-+
[4]   HIGH-EFFICIENCY CW IMPATT OPERATION [J].
IGLESIAS, DE ;
EVANS, WJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1610-+
[5]   LOW-FREQUENCY HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM IMPATT DIODES [J].
JOHNSTON, RL ;
SCHARFETTER, DL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (11) :905-+
[6]   HIGH-POWER HIGH-EFFICIENCY SILICON AVALANCHE DIODES AT ULTRA HIGH FREQUENCIES [J].
PRAGER, HJ ;
CHANG, KKN ;
WEISBROD, S .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (04) :586-+
[7]  
SCHARFETTER DL, TO BE PUBLISHED
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