CURRENT-INDUCED BREAKDOWN IN PARA-TYPE COLLECTOR ALGAAS/GAAS HBTS

被引：5

作者：

GAO, GB ^{[1
]}

HUANG, D ^{[1
]}

CHYI, JI ^{[1
]}

CHEN, J ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 03期

关键词：

D O I：

10.1109/16.47791

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A phenomenon called “current-induced breakdown” that may occur in p-type collector heterojunction bipolar transistors is described. It is shown that the breakdown voltage across the p-type col-. © 1990 IEEE

引用

页码：807 / 810

页数：4

共 6 条

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