TRANSIT-TIME REDUCTION IN ALGAAS/GAAS HBTS UTILIZING VELOCITY OVERSHOOT IN THE P-TYPE COLLECTOR REGION

被引：27

作者：

MORIZUKA, K

KATOH, R

ASAKA, M

IIZUKA, N

TSUDA, K

OBARA, M

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：585 / 587

页数：3

相关论文

共 6 条

[1] A POSSIBLE NEAR-BALLISTIC COLLECTION IN AN ALGAAS GAAS HBT WITH A MODIFIED COLLECTOR STRUCTURE
ISHIBASHI, T
YAMAUCHI, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) : 401 - 404
[2] KATOH R, 1987, IEDM, P248
[3] A PROPOSED STRUCTURE FOR COLLECTOR TRANSIT-TIME REDUCTION IN ALGAAS-GAAS BIPOLAR-TRANSISTORS
MAZIAR, CM
KLAUSMEIERBROWN, ME
LUNDSTROM, MS
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (08) : 483 - 485
[4] ELECTRON SPACE-CHARGE EFFECTS ON HIGH-FREQUENCY PERFORMANCE OF ALGAAS/GAAS HBTS UNDER HIGH-CURRENT-DENSITY OPERATION
MORIZUKA, K
KATOH, R
TSUDA, K
ASAKA, M
IIZUKA, N
OBARA, M
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) : 570 - 572
[5] ALGAAS/GAAS HBTS FABRICATED BY A SELF-ALIGNMENT TECHNOLOGY USING POLYIMIDE FOR ELECTRODE SEPARATION
MORIZUKA, K
ASAKA, M
IIZUKA, N
TSUDA, K
OBARA, M
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) : 598 - 600
[6] ELECTRON VELOCITY OVERSHOOT IN THE COLLECTOR DEPLETION LAYER OF ALGAAS/GAAS HBTS
YAMAUCHI, Y
ISHIBASHI, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 655 - 657