TEMPERATURE-DEPENDENCE OF THE ABSORPTION-EDGE IN CUGAS2

被引：15

作者：

HORIG, W ^{[1
]}

NEUMANN, H ^{[1
]}

RECCIUS, E ^{[1
]}

WEINERT, H ^{[1
]}

KUHN, G ^{[1
]}

SCHUMANN, B ^{[1
]}

机构：

[1] KARL MARX UNIV,ARBEITSGEMEINSCHAFT A3B5 HALBLEITER,FACHBEREICH KRISTALLOG,DDR-701 LEIPZIG,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 01期

关键词：

BAND STRUCTURE;

D O I：

10.1002/pssa.2210510105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependence of the absorption edge in CuGaS2 is determined by absorption measurements in single crystals and thin films. A linear change of the gap energy Eg with a temperature coefficient of dEg/dT = − (2.2 ± 0.2) × 10−4 eV/K is found in the temperature range from 80 to 300 K. It is shown that the downshift in the absolute values of dEg/dT of the I–III–VI2 and I–VII compounds compared to their II–VI analogs can be explained by the p–d hybridization of the uppermost valence band. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：57 / 62

页数：6

共 38 条

[1]

AKIMCHENKO IP, 1973, FIZ TEKH POLUPROV, V7, P144

[2] THEORY OF TEMPERATURE-DEPENDENCE OF ELECTRONIC BAND STRUCTURES [J].