AS2S3 GAAS, A NEW AMORPHOUS CRYSTALLINE HETEROJUNCTION FOR THE III-V SEMICONDUCTORS

被引：28

作者：

YABLONOVITCH, E

GMITTER, TJ

BAGLEY, BG

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 21期

关键词：

D O I：

10.1063/1.104163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Much of the technology of our era is based on the SiO2/Si amorphous/crystalline heterojunction interface. Now it appears that As 2S3/GaAs amorphous/crystalline heterojunctions show some technological promise. We have found that properly prepared As2S 3/GaAs interfaces can have reasonably good electronic quality. The interfacial recombination velocity is ≊15 000 cm/s at flat band, which results in a ∼100-fold reduction of perimeter recombination currents in p-n junction mesas. This can be important on heterojunction transistor emitter-base perimeters, solar cell and light-emitting diode perimeters, and for reducing mirror facet recombination in semiconductor lasers.

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页码：2241 / 2243

页数：3

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