STRUCTURE STUDIES OF NEAR-SURFACE LAYER OF GE CRYSTALS AT THEIR BOMBARDMENT WITH ACCELERATED IONS AT VARIOUS TEMPERATURES

被引:3
作者
LEBEDEV, SY [1 ]
OMELYANOVSKAYA, NM [1 ]
机构
[1] PHYS & POWER ENGN INST, OBNINSK, USSR
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1974年 / 23卷 / 01期
关键词
D O I
10.1080/00337577408232037
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
引用
收藏
页码:1 / 5
页数:5
相关论文
共 25 条
[1]  
Abroyan I. A., 1968, Fizika Tverdogo Tela, V10, P3726
[2]  
ABROYAN IA, 1972, FIZ TVERD TELA+, V14, P252
[3]   TEMPERATURE DEPENDENCE OF EJECTION PATTERNS IN GE SPUTTERING [J].
ANDERSON, GS ;
OLIN, HJ ;
WEHNER, GK .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) :3492-&
[4]   TEMPERATURE DEPENDENCE OF EJECTION PATTERNS IN GE, SI, INSB, AND INAS SPUTTERING [J].
ANDERSON, GS ;
WEHNER, GK .
SURFACE SCIENCE, 1964, 2 :367-375
[5]  
BLATT FD, 1971, PHYSICS ELECTRON CON
[6]  
EVDOKIMOV JN, 1967, PHYS LETT A, V25, P619
[7]  
FAGOT B, 1966, CR ACAD SCI B PHYS, V262, P173
[8]   FRACTIONATION EFFECT IN ANNEALING OF RADIATION DAMAGED SILICON [J].
FANG, PH ;
RYAN, JL ;
TARKO, HB .
PHYSICS LETTERS A, 1970, A 33 (02) :75-&
[9]  
FANG PH, 1965, PHYS LETT A, V140, pA690
[10]  
GERASIMO.AI, 1970, DOKL AKAD NAUK SSSR+, V192, P324