TEMPERATURE DEPENDENCE OF EJECTION PATTERNS IN GE SPUTTERING

被引：26

作者：

ANDERSON, GS

OLIN, HJ

WEHNER, GK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 12期

关键词：

D O I：

10.1063/1.1729245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3492 / &

共 11 条

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[6]

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[7] EFFECTS OF MONOLAYER ADSORPTION AND BOMBARDMENT DAMAGE ON AUGER ELECTRON EJECTION FROM GERMANIUM [J].

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[8]

KOEDAM M, 1961, THESIS STATE U UTREC

[9] STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J].

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[10] SPUTTERING EXPERIMENTS WITH 1- TO 5-KEV AR+ IONS [J].

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