EFFECTS OF MONOLAYER ADSORPTION AND BOMBARDMENT DAMAGE ON AUGER ELECTRON EJECTION FROM GERMANIUM

被引：24

作者：

HAGSTRUM, HD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1961年 / 32卷 / 06期

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D O I：

10.1063/1.1736151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1015 / &

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[1] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM
ALLEN, FG
EISINGER, J
HAGSTRUM, HD
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[2] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION
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[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161
[3] THEORY OF AUGER NEUTRALIZATION OF IONS AT SURFACE OF A DIAMOND-TYPE SEMICONDUCTOR
HAGSTRUM, HD
[J]. PHYSICAL REVIEW, 1961, 122 (01): : 83 - +
[4] AUGER ELECTRON EJECTION FROM GERMANIUM AND SILICON BY NOBLE GAS IONS
HAGSTRUM, HD
[J]. PHYSICAL REVIEW, 1960, 119 (03): : 940 - 952
[5] STUDIES OF AUGER ELECTRONS EJECTED FROM GERMANIUM BY SLOWLY MOVING POSITIVE IONS
HAGSTRUM, HD
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 33 - 36
[6] EFFECT OF MONOLAYER ADSORPTION ON THE EJECTION OF ELECTRONS FROM METALS BY IONS
HAGSTRUM, HD
[J]. PHYSICAL REVIEW, 1956, 104 (06): : 1516 - 1527
[7] OXYGEN ADSORPTION ON SILICON AND GERMANIUM
HAGSTRUM, HD
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 1020 - &