AUGER ELECTRON EJECTION FROM GERMANIUM AND SILICON BY NOBLE GAS IONS

被引：82

作者：

HAGSTRUM, HD

机构：

来源：

PHYSICAL REVIEW | 1960年 / 119卷 / 03期

关键词：

D O I：

10.1103/PhysRev.119.940

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：940 / 952

页数：13

共 30 条

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