STUDIES OF AUGER ELECTRONS EJECTED FROM GERMANIUM BY SLOWLY MOVING POSITIVE IONS

被引：8

作者：

HAGSTRUM, HD

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1960年 / 14卷

关键词：

D O I：

10.1016/0022-3697(60)90203-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：33 / 36

页数：4

共 12 条

[1]

Allen F.G., COMMUNICATION

[2] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J].

ALLEN, FG ;

EISINGER, J ;

HAGSTRUM, HD ;

LAW, JT .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) :1563-1571

[3] VARIATION OF CONTACT POTENTIAL WITH CRYSTAL FACE FOR GERMANIUM [J].

ALLEN, FG ;

FOWLER, AB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) :107-114

[4] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].

FARNSWORTH, HE ;

SCHLIER, RE ;

GEORGE, TH ;

BURGER, RM .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161

[5] ION BOMBARDMENT-CLEANING OF GERMANIUM AND TITANIUM AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].

FARNSWORTH, HE ;

SCHLIER, RE ;

GEORGE, TH ;

BURGER, RM .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :252-253

[6] THEORY OF AUGER EJECTION OF ELECTRONS FROM METALS BY IONS [J].

HAGSTRUM, HD .

PHYSICAL REVIEW, 1954, 96 (02) :336-365

[7] STATE DENSITY IN THE VALENCE BAND OF SILICON [J].

HAGSTRUM, HD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :211-216

[8] AUGER EJECTION OF ELECTRONS FROM MOLYBDENUM BY NOBLE GAS IONS [J].

HAGSTRUM, HD .

PHYSICAL REVIEW, 1956, 104 (03) :672-683

[9] AUGER EJECTION OF ELECTRONS FROM TUNGSTEN BY NOBLE GAS IONS [J].

HAGSTRUM, HD .

PHYSICAL REVIEW, 1954, 96 (02) :325-335

[10] SPUTTERING YIELD OF GERMANIUM IN RARE GASES [J].

LAEGREID, N ;

WEHNER, G ;

MECKEL, B .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) :374-377

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