JUNCTION LEAKAGE IN TITANIUM SELF-ALIGNED SILICIDE DEVICES

被引：42

作者：

AMANO, J ^{[1
]}

NAUKA, K ^{[1
]}

SCOTT, MP ^{[1
]}

TURNER, JE ^{[1
]}

TSAI, R ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,FT COLLINS,CO 80525

来源：

关键词：

D O I：

10.1063/1.97584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：737 / 739

页数：3

共 7 条

[1] DOPANT REDISTRIBUTION DURING TITANIUM SILICIDE FORMATION
AMANO, J
MERCHANT, P
CASS, TR
MILLER, JN
KOCH, T
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2689 - 2693
[2] REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
ANDREWS, JM
LEPSELTER, MP
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 1011 - +
[3] Chen D. C., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P118
[4] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714
[5] MURARKA SP, 1983, SILICIDES VLSI APPL, P15
[6] NAUKA K, 1986, SILICON INTEGRATED C
[7] LATERAL GROWTH OF TITANIUM SILICIDE OVER A SILICON DIOXIDE LAYER
REVESZ, P
GYIMESI, J
POGANY, L
PETO, G
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2114 - 2115