APPARATUS FOR LOW-TEMPERATURE GROWTH OF DIAMOND-CONTAINING FILMS

被引:3
作者
FANG, PH
KINNIER, JH
机构
关键词
D O I
10.1557/JMR.1989.1243
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1243 / 1245
页数:3
相关论文
共 9 条
[1]  
Aksenov I. I., 1980, Soviet Physics - Technical Physics, V25, P1164
[2]  
DNAMBA Y, 1985, J VAC SCI TECH A, V3, P319
[3]   TETRAHEDRAL CARBON-FILM BY HYDROGEN GAS REACTIVE RF-SPUTTERING OF GRAPHITE ONTO LOW-TEMPERATURE SUBSTRATE [J].
HIRAKI, A ;
KAWANO, T ;
KAWAKAMI, Y ;
HAYASHI, M .
SOLID STATE COMMUNICATIONS, 1984, 50 (08) :713-716
[4]  
INUZUKA T, 1986, APPL PHYS, V55, P640
[5]   GROWTH OF DIAMOND PARTICLES FROM METHANE-HYDROGEN GAS [J].
MATSUMOTO, S ;
SATO, Y ;
TSUTSUMI, M ;
SETAKA, N .
JOURNAL OF MATERIALS SCIENCE, 1982, 17 (11) :3106-3112
[6]   GROWTH OF DIAMOND THIN-FILMS BY ELECTRON-ASSISTED CHEMICAL VAPOR-DEPOSITION AND THEIR CHARACTERIZATION [J].
SAWABE, A ;
INUZUKA, T .
THIN SOLID FILMS, 1986, 137 (01) :89-99
[7]  
SHIBUKI K, COMMUNICATION
[8]  
SPITSYN BV, 1956, USSR INV CERT 339134
[9]  
SUZUKI H, 1986, J JPN SOC POWDER POW, V33, P281