LEVEL OF DANGLING BOND CENTERS AND ITS BROADENING DUE TO DISORDER IN AMORPHOUS-SILICON AS ELUCIDATED BY OPTICALLY DETECTED MAGNETIC-RESONANCE MEASUREMENTS

被引：16

作者：

MORIGAKI, K

SANO, Y

HIRABAYASHI, I

KONAGAI, M

SUZUKI, M

机构：

[1] KANAZAWA UNIV,FAC TECHNOL,KANAZAWA,ISHIKAWA 920,JAPAN

[2] TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 43卷 / 10期

关键词：

D O I：

10.1016/0038-1098(82)90985-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：751 / 755

页数：5

共 13 条

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