EFFECTS OF RF-BIAS ON PROPERTIES OF SPUTTERED SILICON FILMS

被引：4

作者：

SUZUKI, M ^{[1
]}

MAEKAWA, T ^{[1
]}

OKANO, S ^{[1
]}

BANDOW, T ^{[1
]}

机构：

[1] ISHIKAWA TECH COLL,TSUBATA 92903,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.20.L485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L485 / L487

页数：3

共 8 条

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MODDEL, G
PAESLER, MA
PAUL, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 906 - 912
[2] FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55
[3] FRITZSCHE H, 1977, 7TH P INT C AM LIQ S, P3
[4] INFLUENCE OF DEPOSITION CONDITIONS ON SPUTTER-DEPOSITED AMORPHOUS SILICON
PAWLEWICZ, WT
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5595 - 5601
[5] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON
SPEAR, WE
LECOMBER, PG
[J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196
[6] SPEAR WE, 1976, PHILOS MAG, V33, P953
[7] DOPING EFFECTS OF GROUP-III AND GROUP-V ELEMENT ON A-SI PREPARED BY HIGH-PRESSURE RF SPUTTERING
SUZUKI, M
NAKAO, A
MAEKAWA, T
KUMEDA, M
SHIMIZU, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 85 - 89
[8] SUZUKI M, 1980, SOLID STATE COMMUN, V36, P369