BORON-DIFFUSION IN POLYCRYSTALLINE SILICON LAYERS

被引：43

作者：

HORIUCHI, S ^{[1
]}

BLANCHARD, R ^{[1
]}

机构：

[1] STANFORD RES INST,STANFORD,CA 94305

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 06期

关键词：

D O I：

10.1016/0038-1101(75)90029-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：529 / 532

页数：4

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