HOT-CARRIER STRESSING DAMAGE IN WIDE AND NARROW LDD NMOS TRANSISTORS

被引：13

作者：

BOURCERIE, M ^{[1
]}

DOYLE, BS ^{[1
]}

MARCHETAUX, JC ^{[1
]}

BOUDOU, A ^{[1
]}

MINGAM, H ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期

关键词：

D O I：

10.1109/55.31692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：132 / 134

页数：3

共 15 条

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[10] INTERFACE STATES UNDER LOCOS BIRDS BEAK REGION [J].

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