MINIATURIZATION OF SI MOSFET AT 77-K

被引:24
作者
KAMGAR, A
机构
关键词
D O I
10.1109/T-ED.1982.20860
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1226 / 1228
页数:3
相关论文
共 6 条
  • [1] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION
    BREWS, JR
    FICHTNER, W
    NICOLLIAN, EH
    SZE, SM
    [J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 2 - 4
  • [2] CHARGE-SHEET MODEL OF MOSFET
    BREWS, JR
    [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 345 - 355
  • [3] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION
    GAENSSLEN, FH
    RIDEOUT, VL
    WALKER, EJ
    WALKER, JJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229
  • [4] SUBTHRESHOLD BEHAVIOR OF SILICON MOSFETS AT 4.2-K
    KAMGAR, A
    [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 537 - 539
  • [5] Sze S.M., 1981, PHYSICS SEMICONDUCTO, P24
  • [6] SUB-THRESHOLD CONDUCTION IN MOSFETS
    TAYLOR, GW
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) : 337 - 350