POLARIZATION EFFECTS AND CARRIER CAPTURE IN QUANTUM WIRES

被引：9

作者：

PRINS, FE ^{[1
]}

LEHR, G ^{[1
]}

FROHLICH, EM ^{[1
]}

SCHWEIZER, H ^{[1
]}

FORCHEL, A ^{[1
]}

STRAKA, J ^{[1
]}

机构：

[1] UNIV WURZBURG,W-8700 WURZBURG,GERMANY

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 11卷 / 03期

关键词：

D O I：

10.1016/0749-6036(92)90390-Q

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using the implantation induced intermixing technique we have realized GaAs/AlGaAs quantum wires with widths between 200 and 60 nm. The achieved lateral confinement did not depend on crystal orientation. Exciting the wires resonantly a strong wire width dependent polarization effect was observed. The carrier capture from the lateral barriers into these wires enhances at elevated temperatures. © 1992.

引用

页码：321 / 323

页数：3

共 5 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].