OBSERVATION OF PIEZOELECTRIC FIELD-INDUCED CARRIERS IN ALGAAS INGAAS STRAINED-LAYER HETEROSTRUCTURES

被引：13

作者：

LI, X

LONGENBACH, KF

WANG, WI

机构：

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 12期

关键词：

D O I：

10.1063/1.107288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hall effect measurements of GaAs/AlGaAs/InGaAs strained-layer heterostructures grown on [100], [311], and [111] substrates have been performed and it is observed that the two-dimensional carrier density is a strong function of growth orientation. The observed changes in carrier density are in the range of 5 x 10(11)-1.6 x 10(12) cm-2 and are consistent with the generation of piezoelectric fields in [N11] orientated strained-layer heterostructures. These strain-induced effects can be used to alter the threshold voltages of field-effect transistor or produce large carrier densities without modulation doping.

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页码：1513 / 1515

页数：3

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