FT-IR SPECTROSCOPY OF GRAFTED SURFACES - HYDROXY SILANES AND CHLORO SILANES ONTO SILICON-NITRIDE

被引：1

作者：

BARATON, MI ^{[1
]}

JAFFREZIC, N ^{[1
]}

QUINTARD, P ^{[1
]}

机构：

[1] ECOLE CENT LYON,PHYSICOCHIM INTERFACES LAB,CNRS,URA 404,F-69131 ECULLY,FRANCE

来源：

JOURNAL OF MOLECULAR STRUCTURE | 1992年 / 267卷

关键词：

D O I：

10.1016/0022-2860(92)87055-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Grafting molecules is a promising way to ensure a good selectivity of electrochemical sensors. Aminosilanes grafting onto silica is a well-known reaction, but the reverse way, i.e. hydroxy (or chloro) silanes onto silicon nitride seems to be more versatile. The FT-IR spectroscopic analysis of a grafted silicon nitride surface brings evidence of highly resistant bonds. Furthermore, the kinetic of the H-D isotopic exchange can be regarded as a good description of the grafting density

引用

页码：353 / 358

页数：6

共 10 条

[1] FT-IR STUDY OF THE SURFACE-PROPERTIES OF SILICON-NITRIDE [J].

BUSCA, G ;

LORENZELLI, V ;

PORCILE, G ;

BARATON, MI ;

QUINTARD, P ;

MARCHAND, R .

MATERIALS CHEMISTRY AND PHYSICS, 1986, 14 (02) :123-140

[2] FT-IR CHARACTERIZATION OF SILICON-NITRIDE SI3N4 AND SILICON OXYNITRIDE SI2ON2 SURFACES [J].

BUSCA, G ;

LORENZELLI, V ;

BARATON, MI ;

QUINTARD, P ;

MARCHAND, R .

JOURNAL OF MOLECULAR STRUCTURE, 1986, 143 :525-528

[3] LASER SYNTHESIS OF ULTRAFINE POWDERS [J].

CAUCHETIER, M ;

CROIX, O ;

LUCE, M ;

MICHON, M ;

PARIS, J ;

TISTCHENKO, S .

CERAMICS INTERNATIONAL, 1987, 13 (01) :13-17

[4] PECVD SILICON OXYNITRIDE - A NEW INSULATOR FOR ISFETS WITH INSULATOR SURFACE MODIFIED BY CHEMICAL GRAFTING [J].

CHOVELON, JM ;

JAFFREZICRENAULT, N ;

CLECHET, P ;

CROS, Y ;

FOMBON, JJ ;

BARATON, MI ;

QUINTARD, P .

SENSORS AND ACTUATORS B-CHEMICAL, 1991, 4 (3-4) :385-389

[5]

CHOVELON JM, 1991, THESIS EC CTR LYON

[6] SILICA SURFACE SENSITIZATION AND CHEMICAL SENSORS [J].

CLECHET, P ;

JAFFREZICRENAULT, N .

ADVANCED MATERIALS, 1990, 2 (6-7) :293-298

[7] ION-SENSING DEVICES WITH SILICON-NITRIDE AND BOROSILICATE GLASS INSULATORS [J].

HARAME, DL ;

BOUSSE, LJ ;

SHOTT, JD ;

MEINDL, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1700-1707

[8] STUDY OF THE SILICON-NITRIDE AQUEOUS-ELECTROLYTE INTERFACE ON COLLOIDAL AQUEOUS SUSPENSIONS AND ON ELECTROLYTE INSULATOR SEMICONDUCTOR STRUCTURES [J].

JAFFREZICRENAULT, N ;

DE, A ;

CLECHET, P ;

MAAREF, A .

COLLOIDS AND SURFACES, 1989, 36 (01) :59-68

[9]

RAO CNR, 1967, CHEM APPLICATIONS IN

[10]

SORLINO M, 1965, ANN CHIM, V10, P105

← 1 →