CARRIER REMOVAL EFFECTS IN NEUTRON-IRRADIATED LITHIUM-DOPED SILICON

被引：8

作者：

KIMERLING, LC

DREVINSKY, PJ

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1971年 / NS18卷 / 06期

关键词：

D O I：

10.1109/TNS.1971.4326414

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：60 / +

页数：1

共 28 条

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[2]

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[3]

BROWER KL, 1970, INT C RADIATION EFFE

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LORI, J .

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[5]

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FERMAN, JW .

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[7] INTRINSIC DIFFUSION OF BORON AND PHOSPHORUS IN SILICON FREE FROM SURFACE EFFECTS [J].

GHOSHTAGORE, RN .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :389-+

[8] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].

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JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1214-1218

[9] CARRIER REMOVAL IN NEUTRON IRRADIATED SILICON [J].

HOLMES, RR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) :137-+

[10]

MAGEE TJ, 1970, THESIS TULANE U

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