SEEMAN-BOHLIN X-RAY-DIFFRACTION STUDY OF AL-1-PERCENT-SI THIN-FILMS USED IN ULSI DEVICES

We report some preliminary results concerning the microstructure of sputtered Al-1%Si thin films obtained with a glancing angle X-ray diffractometer. Preferred growth along {111} planes has been observed to depend both on the deposition parameters, such as temperature, and on the substrate material. The resistivity of the films has been shown to be decreasing as the ratio between the intensities of the (111) and (200) diffraction peaks increases.