CONTINUOUS GROWTH-MODEL FOR INTERFACE MOTION DURING ALLOY SOLIDIFICATION

[1] SOLUTE TRAPPING - COMPARISON OF THEORY WITH EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (23) : 2489 - 2492

[2] SOLUTE TRAPPING IN SILICON BY LATERAL MOTION OF (111) LEDGES [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (21) : 2675 - 2678

[3] DISSIPATION-THEORY TREATMENT OF THE TRANSITION FROM DIFFUSION-CONTROLLED TO DIFFUSIONLESS SOLIDIFICATION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 552 - 554

[4] MODEL FOR SOLUTE REDISTRIBUTION DURING RAPID SOLIDIFICATION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1158 - 1168

[5] AZIZ MJ, 1986, LASER SURFACE TREATM, P649

[6] AZIZ MJ, 1987, UNDERCOOLED ALLOY PH, P390

[7] AZIZ MJ, 1985, MATER RES SOC S P, V35, P153

[8] DEPENDENCE OF TRAPPING AND SEGREGATION OF INDIUM IN SILICON ON THE VELOCITY OF THE LIQUID-SOLID INTERFACE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 912 - 914

[9] SOLUTE TRAPPING BY RAPID SOLIDIFICATION [J]. ACTA METALLURGICA, 1969, 17 (05): : 575 - &

[10] BAKER JC, 1970, SOLIDIFICATION, P23

[1] SOLUTE TRAPPING - COMPARISON OF THEORY WITH EXPERIMENT [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (23) : 2489 - 2492

[2] SOLUTE TRAPPING IN SILICON BY LATERAL MOTION OF (111) LEDGES [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (21) : 2675 - 2678

[3] DISSIPATION-THEORY TREATMENT OF THE TRANSITION FROM DIFFUSION-CONTROLLED TO DIFFUSIONLESS SOLIDIFICATION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 552 - 554

[4] MODEL FOR SOLUTE REDISTRIBUTION DURING RAPID SOLIDIFICATION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1158 - 1168

[5] AZIZ MJ, 1986, LASER SURFACE TREATM, P649

[6] AZIZ MJ, 1987, UNDERCOOLED ALLOY PH, P390

[7] AZIZ MJ, 1985, MATER RES SOC S P, V35, P153

[8] DEPENDENCE OF TRAPPING AND SEGREGATION OF INDIUM IN SILICON ON THE VELOCITY OF THE LIQUID-SOLID INTERFACE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 912 - 914

[9] SOLUTE TRAPPING BY RAPID SOLIDIFICATION [J]. ACTA METALLURGICA, 1969, 17 (05): : 575 - &

[10] BAKER JC, 1970, SOLIDIFICATION, P23