SLIDER LPE OF HG1-XCDXTE USING MERCURY PRESSURE CONTROLLED GROWTH SOLUTIONS

[1] LATTICE-CONSTANT, BANDGAP, THICKNESS, AND SURFACE-MORPHOLOGY OF INGAASP-INP LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, SUPERCOOLING AND 2-PHASE-SOLUTION GROWTH TECHNIQUES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 241 - 280

[2] HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272

[3] LIQUIDUS ISOTHERMS, SOLIDUS LINES AND LPE GROWTH IN THE TE-RICH CORNER OF THE HG-CD-TE SYSTEM [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (06) : 945 - 961

[4] HARMAN TC, 1978, SOLID STATE RES REPO

[5] HARMAN TC, 1981, SPIE P INFRARED DETE

[6] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[7] TEMPERATURE AND ALLOY COMPOSITIONAL DEPENDENCES OF ENERGY GAP OF HG1-XCDXTE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4865 - &

[8] ENERGY GAP IN HG1-XCDXTE BY OPTICAL ABSORPTION [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4077 - &

[9] PARTIAL PRESSURES OVER HGTE-CDTE SOLID-SOLUTIONS .2. RESULTS FOR 10,20, AND 58 MOLE PERCENT CDTE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 451 - 456

[10] HELICONS AND NONRESONANT CYCLOTRON ABSORPTION IN SEMIDONDUCTORS .2. HG1-XCDXTE [J]. PHYSICAL REVIEW, 1969, 181 (03): : 1181 - &

[1] LATTICE-CONSTANT, BANDGAP, THICKNESS, AND SURFACE-MORPHOLOGY OF INGAASP-INP LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, SUPERCOOLING AND 2-PHASE-SOLUTION GROWTH TECHNIQUES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 241 - 280

[2] HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272

[3] LIQUIDUS ISOTHERMS, SOLIDUS LINES AND LPE GROWTH IN THE TE-RICH CORNER OF THE HG-CD-TE SYSTEM [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (06) : 945 - 961

[4] HARMAN TC, 1978, SOLID STATE RES REPO

[5] HARMAN TC, 1981, SPIE P INFRARED DETE

[6] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[7] TEMPERATURE AND ALLOY COMPOSITIONAL DEPENDENCES OF ENERGY GAP OF HG1-XCDXTE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4865 - &

[8] ENERGY GAP IN HG1-XCDXTE BY OPTICAL ABSORPTION [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4077 - &

[9] PARTIAL PRESSURES OVER HGTE-CDTE SOLID-SOLUTIONS .2. RESULTS FOR 10,20, AND 58 MOLE PERCENT CDTE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 451 - 456

[10] HELICONS AND NONRESONANT CYCLOTRON ABSORPTION IN SEMIDONDUCTORS .2. HG1-XCDXTE [J]. PHYSICAL REVIEW, 1969, 181 (03): : 1181 - &