LOW-TEMPERATURE DEPOSITION OF PYROLYTIC SIO2 FOR PASSIVATING SEMICONDUCTOR POWER DIODES

被引：5

作者：

ALBELLA, JM

CRIADO, A

MUNOZMERINO, E

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS,MADRID 34,SPAIN

[2] CIUDAD UNIV MADRID,ETSI TELECOMUN,UNIV POLITECNICA,MADRID 3,SPAIN

来源：

关键词：

D O I：

10.1016/0040-6090(76)90062-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：479 / 482

页数：4

共 9 条

[1]

BELLAMY LJ, 1965, INFRARED SPECTRA COM

BOOKER, GR ;

BENJAMIN, CE .

[3]

Burger R M, 1967, FUNDAMENTALS SILICON, V1

[4]

CONLEY RT, 1970, INFRARED SPECTRA COM

[5] A DIFFUSION MASK FOR GERMANIUM [J].

JORDAN, EL .

[6] A METHOD FOR THE DEPOSITION OF SIO AT LOW TEMPERATURES [J].

KLERER, J .

KLERER, J .

[8] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J].

PLISKIN, WA ;

LEHMAN, HS .

[9]

PLISKIN WA, 1964, J ELECTROCHEM SOC, V111, P782