ANALYSIS OF OXIDE-SEMICONDUCTOR INTERFACE USING AUGER AND ESCA AS APPLIED TO INP AND GAAS

被引：77

作者：

WILMSEN, CW

KEE, RW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1513 / 1517

页数：5

共 22 条

[1] USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J].

BROWN, F ;

MACKINTOSH, WD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) :1096-1102

[2] ELECTRICAL-PROPERTIES OF THERMAL OXIDES ON GAAS [J].

BUTCHER, DN ;

SEALY, BJ .

ELECTRONICS LETTERS, 1977, 13 (19) :558-559

[3]

Carlson T. A., 1975, PHOTOELECTRON AUGER

[4] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].

CHANG, CC ;

SCHWARTZ, B ;

MURARKA, SP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :922-926

[5]

DEARNLY G, 1973, ION IMPLANTATION SEM, P405

[6] MOS-GATE TECHNOLOGY ON GAAS AND OTHER 3-5 COMPOUNDS [J].

HARTNAGEL, HL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :860-867

[7] MEASUREMENTS OF CHEMICAL SHIFTS IN PHOTOELECTRON SPECTRA OF ARSENIC AND BROMINE COMPOUNDS [J].

HULETT, LD ;

CARLSON, TA .

APPLIED SPECTROSCOPY, 1971, 25 (01) :33-&

[8] AUGER ANALYSIS OF SIO2-SI INTERFACE [J].

JOHANNESSEN, JS ;

SPICER, WE ;

STRAUSSER, YE .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3028-3037

[9] AN INP MIS DIODE [J].

LILE, DL ;

COLLINS, DA .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :554-556

[10]

LILE DL, 1978, APPL PHYS LETT, V32, P494

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