STRONG ENHANCEMENT OF THE PHOTOLUMINESCENCE OF N-TYPE INDIUM-PHOSPHIDE UNDER A CATHODIC POLARIZATION

被引：11

作者：

ETCHEBERRY, A

VIGNERON, J

SCULFORT, JL

GAUTRON, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.102275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：145 / 147

页数：3

共 19 条

[1] BIAS-DEPENDENT PHOTO-LUMINESCENCE INTENSITIES IN N-INP SCHOTTKY DIODES [J].

ANDO, K ;

YAMAMOTO, A ;

YAMAGUCHI, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6432-6434

[2] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J].

ASPNES, DE .

SURFACE SCIENCE, 1983, 132 (1-3) :406-421

[3] CONCENTRATION-DEPENDENT ABSORPTION AND PHOTOLUMINESCENCE OF N-TYPE INP [J].

BUGAJSKI, M ;

LEWANDOWSKI, W .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :521-530

[4] PHOTOLUMINESCENT PROPERTIES OF N-GAAS ELECTRODES - SIMULTANEOUS DETERMINATION OF DEPLETION WIDTHS AND SURFACE HOLE-CAPTURE VELOCITIES IN PHOTOELECTROCHEMICAL CELLS [J].

BURK, AA ;

JOHNSON, PB ;

HOBSON, WS ;

ELLIS, AB .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1621-1626

[5] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].

CASEY, HC ;

BUEHLER, E .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249

[6]

CHANG RR, 1987, J APPL PHYS, V61, P995

[7]

ETCHEBERRY A, 1984, 35TH ISE M BERK

[8]

ETCHEBERRY A, 1985, APPL PHYS LETT, V46, P747

[9]

FUKUI T, 1987, JPN J APPL PHYS, V18, P1651

[10] AN ELLIPSOMETRIC STUDY OF THE ELECTROCHEMICAL SURFACE MODIFICATIONS OF N-INP [J].

GAGNAIRE, A ;

JOSEPH, J ;

ETCHEBERRY, A ;

GAUTRON, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) :1655-1658

← 1 2 →