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INFLUENCE OF INSULATOR SURFACE CONDUCTION ON TRANSIENT-RESPONSE OF MIS CAPACITORS
被引:4
作者
:
JOSEPH, B
论文数:
0
引用数:
0
h-index:
0
JOSEPH, B
机构
:
来源
:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
|
1978年
/ 45卷
/ 01期
关键词
:
D O I
:
10.1002/pssa.2210450149
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:K25 / K28
页数:4
相关论文
共 10 条
[1]
CALZOLARI PU, 1973, SOLID STATE ELECTRON, V17, P1001
[2]
Conti M., 1973, Alta Frequenza, V42, P93
[3]
GROVE AS, 1967, PHYS TECHNOL S, P347
[4]
CHARGE MOTION ON SILICON OXIDE SURFACES
HO, P
论文数:
0
引用数:
0
h-index:
0
HO, P
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
LEHOVEC, K
FEDOTOWSKY, L
论文数:
0
引用数:
0
h-index:
0
FEDOTOWSKY, L
[J].
SURFACE SCIENCE,
1967,
6
(04)
: 440
-
+
[5]
CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD
JUND, C
论文数:
0
引用数:
0
h-index:
0
JUND, C
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(04)
: 315
-
&
[6]
EFFECTS OF LATERAL SURFACE GENERATION ON MOS-C LINEAR-SWEEP AND C-T TRANSIENT CHARACTERISTICS
PIERRET, RF
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
PIERRET, RF
SMALL, DW
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
SMALL, DW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(04)
: 457
-
458
[7]
LINEAR-SWEEP MOS-C TECHNIQUE FOR DETERMINING MINORITY CARRIER LIFETIMES
PIERRET, RF
论文数:
0
引用数:
0
h-index:
0
PIERRET, RF
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(07)
: 869
-
+
[8]
INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR
SCHRODER, DK
论文数:
0
引用数:
0
h-index:
0
SCHRODER, DK
GULDBERG, J
论文数:
0
引用数:
0
h-index:
0
GULDBERG, J
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(12)
: 1285
-
+
[9]
ZAKHAROV AK, 1975, MIKROELEKTRONIKA, V2, P178
[10]
ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30
←
1
→
共 10 条
[1]
CALZOLARI PU, 1973, SOLID STATE ELECTRON, V17, P1001
[2]
Conti M., 1973, Alta Frequenza, V42, P93
[3]
GROVE AS, 1967, PHYS TECHNOL S, P347
[4]
CHARGE MOTION ON SILICON OXIDE SURFACES
HO, P
论文数:
0
引用数:
0
h-index:
0
HO, P
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
LEHOVEC, K
FEDOTOWSKY, L
论文数:
0
引用数:
0
h-index:
0
FEDOTOWSKY, L
[J].
SURFACE SCIENCE,
1967,
6
(04)
: 440
-
+
[5]
CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD
JUND, C
论文数:
0
引用数:
0
h-index:
0
JUND, C
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(04)
: 315
-
&
[6]
EFFECTS OF LATERAL SURFACE GENERATION ON MOS-C LINEAR-SWEEP AND C-T TRANSIENT CHARACTERISTICS
PIERRET, RF
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
PIERRET, RF
SMALL, DW
论文数:
0
引用数:
0
h-index:
0
机构:
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
SMALL, DW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(04)
: 457
-
458
[7]
LINEAR-SWEEP MOS-C TECHNIQUE FOR DETERMINING MINORITY CARRIER LIFETIMES
PIERRET, RF
论文数:
0
引用数:
0
h-index:
0
PIERRET, RF
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(07)
: 869
-
+
[8]
INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR
SCHRODER, DK
论文数:
0
引用数:
0
h-index:
0
SCHRODER, DK
GULDBERG, J
论文数:
0
引用数:
0
h-index:
0
GULDBERG, J
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(12)
: 1285
-
+
[9]
ZAKHAROV AK, 1975, MIKROELEKTRONIKA, V2, P178
[10]
ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30
←
1
→