A STUDY OF THE LEAKAGE MECHANISMS OF SILICIDED N+/P JUNCTIONS

[1] ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 972 - 984

[2] GHANDHI SK, 1965, P IEEE, V53, P53

[3] GROVE AS, 1967, PHYS TECHNOL S, P172

[4] COBALT SILICIDE FORMATION BY ION MIXING [J]. THIN SOLID FILMS, 1984, 119 (04) : 357 - 363

[5] HENISCH HK, 1984, SEMICONDUCTOR CONTAC, P63

[6] LIFSHITZ N, UNPUB

[7] Liu R., UNPUB

[8] SELF-ALIGNED COBALT DISILICIDE FOR GATE AND INTERCONNECTION AND CONTACTS TO SHALLOW JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) : 2108 - 2115

[9] MURARKA SP, 1983, SILICIDES VLSI APPLI, P130

[10] THE IMPACT OF INTRINSIC SERIES RESISTANCE ON MOSFET SCALING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) : 503 - 511

[1] ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 972 - 984

[2] GHANDHI SK, 1965, P IEEE, V53, P53

[3] GROVE AS, 1967, PHYS TECHNOL S, P172

[4] COBALT SILICIDE FORMATION BY ION MIXING [J]. THIN SOLID FILMS, 1984, 119 (04) : 357 - 363

[5] HENISCH HK, 1984, SEMICONDUCTOR CONTAC, P63

[6] LIFSHITZ N, UNPUB

[7] Liu R., UNPUB

[8] SELF-ALIGNED COBALT DISILICIDE FOR GATE AND INTERCONNECTION AND CONTACTS TO SHALLOW JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) : 2108 - 2115

[9] MURARKA SP, 1983, SILICIDES VLSI APPLI, P130

[10] THE IMPACT OF INTRINSIC SERIES RESISTANCE ON MOSFET SCALING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) : 503 - 511