SELF-ALIGNED COBALT DISILICIDE FOR GATE AND INTERCONNECTION AND CONTACTS TO SHALLOW JUNCTIONS

被引:48
作者
MURARKA, SP
FRASER, DB
SINHA, AK
LEVINSTEIN, HJ
LLOYD, EJ
LIU, R
WILLIAMS, DS
HILLENIUS, SJ
机构
[1] INTEL CORP,LIVERMORE,CA 94550
[2] AT&T BELL LABS,ALLENTOWN,PA 18103
[3] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1109/T-ED.1987.23204
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2108 / 2115
页数:8
相关论文
共 28 条
  • [1] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
    CROWDER, BL
    ZIRINSKY, S
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371
  • [2] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
  • [3] HILLENIUS SJ, 1986, IEDM
  • [4] KERN W, 1972, SOLID STATE TECHNOL, V15, P34
  • [5] SOLID-PHASE EPITAXY IN SILICIDE-FORMING SYSTEMS
    LAU, SS
    LIAU, ZL
    NICOLET, MA
    [J]. THIN SOLID FILMS, 1977, 47 (03) : 313 - 322
  • [6] LAU SS, 1978, J APPL PHYS, V49, P40005
  • [7] LIU R, 1986, MAY WORKSH REFR MET
  • [8] LIU R, 1986, IEDM
  • [9] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL
    MOCHIZUKI, T
    SHIBATA, K
    INOUE, T
    OHUCHI, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42
  • [10] COSPUTTERED COBALT SILICIDES ON SILICON, POLYCRYSTALLINE SILICON, AND SILICON DIOXIDE
    MURARKA, SP
    VAIDYA, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) : 3404 - 3412