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DISTRIBUTION OF DAMAGE CLUSTERS IN ION-IMPLANTED SILICON

被引：2
作者：
BENNETT, DJ
PRICE, TE
机构：
[1] Dept. of Electr. and Electron. Eng., Paisley Univ.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 08期
关键词：
D O I：
10.1088/0268-1242/8/8/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a model for the description of damage accumulation during ion implantation which includes cluster formation and the subsequent transition to the amorphous phase. The model is compared with a two-dimensional Monte Carlo calculation of point defects created during low-energy boron implantation. This comparison confirms that the model is useful for describing implantation damage in cases where the accumulation of damage occurs by the overlap of individual damage cascades.
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页码：1496 / 1500
页数：5
相关论文
共 8 条
[1]   TRANSIENT ENHANCED DIFFUSION DURING RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON [J].
CHO, K ;
NUMAN, M ;
FINSTAD, TG ;
CHU, WK ;
LIU, J ;
WORTMAN, JJ .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1321-1323
[2]   REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].
CSEPREGI, L ;
KENNEDY, EF ;
GALLAGHER, TJ ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240
[3]  
HOBLER G, 1988, IEEE T CAD, V3, P174
[4]  
Hodgson R. T., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P355
[5]   MONTE-CARLO SIMULATION OF BORON IMPLANTATION INTO SINGLE-CRYSTAL SILICON [J].
KLEIN, KM ;
PARK, C ;
TASCH, AF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (07) :1614-1621
[6]   DIFFUSION OF PHOSPHORUS DURING RAPID THERMAL ANNEALING OF ION-IMPLANTED SILICON [J].
OEHRLEIN, GS ;
COHEN, SA ;
SEDGWICK, TO .
APPLIED PHYSICS LETTERS, 1984, 45 (04) :417-419
[7]  
OEHRLEIN GS, 1984, 13TH P INT C DEF SEM, P539
[8]  
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