FABRICATION OF ELECTROABSORPTION OPTICAL MODULATORS USING LASER DISORDERED GAINAS/GAINASP MULTIQUANTUM-WELL STRUCTURES

被引：7

作者：

LULLO, G ^{[1
]}

MCKEE, A ^{[1
]}

MCLEAN, CJ ^{[1
]}

BRYCE, AC ^{[1
]}

BUTTON, C ^{[1
]}

MARSH, JH ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 19期

关键词：

ELECTROABSORPTION MODULATORS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19941086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electroabsorption optical modulators have been fabricated on GaInAs/GaInAsP multiquantum well structures whose bandgap had been increased by laser photoabsorption-induced disordering. Modulation depths of 20dB have been obtained in material which has been bandgap blue shifted by as much as 120mm, while samples shifted by 80nm gave depths as high as 27dB.

引用

页码：1623 / 1625

页数：3

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