DETERMINATION OF LATTICE MISMATCH IN NISI2 OVERLAYERS ON SI(111)

[1] CHIN KCR, 1981, APPL PHYS LETT, V38, P988

[2] FOLL F, 1981, J APPL PHYS, V52, P250, DOI 10.1063/1.328440

[3] HAMM RA, 1985, MATER RES SOC P, V37, P367

[4] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1071 - 1073

[5] SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF TYPE-A AND TYPE-B NISI2 EPILAYERS ON SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 860 - 864

[6] HUNT BD, 1986, MATER RES SOC S P, V54, P479

[7] SCHOTTKY-BARRIER HEIGHTS OF EPITAXIAL NI-SILICIDES ON SI(111) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 855 - 859

[8] MURARKA SP, 1983, LARGE SCALE INTEGRAT, P62

[9] OKAMOTO M, 1986, MATER RES SOC S P, V56, P157

[10] REIMER L, 1982, PHILOS MAG A, V46, P849

[1] CHIN KCR, 1981, APPL PHYS LETT, V38, P988

[2] FOLL F, 1981, J APPL PHYS, V52, P250, DOI 10.1063/1.328440

[3] HAMM RA, 1985, MATER RES SOC P, V37, P367

[4] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1071 - 1073

[5] SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF TYPE-A AND TYPE-B NISI2 EPILAYERS ON SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 860 - 864

[6] HUNT BD, 1986, MATER RES SOC S P, V54, P479

[7] SCHOTTKY-BARRIER HEIGHTS OF EPITAXIAL NI-SILICIDES ON SI(111) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 855 - 859

[8] MURARKA SP, 1983, LARGE SCALE INTEGRAT, P62

[9] OKAMOTO M, 1986, MATER RES SOC S P, V56, P157

[10] REIMER L, 1982, PHILOS MAG A, V46, P849