SCHOTTKY-BARRIER HEIGHTS OF EPITAXIAL NI-SILICIDES ON SI(111)

被引：18

作者：

LIEHR, M

SCHMID, PE

LEGOUES, FK

HO, PS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573795

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：855 / 859

页数：5

共 18 条

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[3] SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF EPITAXIAL NISI2 ON SI
HAUENSTEIN, RJ
SCHLESINGER, TE
MCGILL, TC
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 853 - 855
[4] CHEMICAL BONDING AND SCHOTTKY-BARRIER FORMATION AT TRANSITION-METAL SILICON INTERFACES
HO, PS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02): : 745 - 756
[5] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111)
LIEHR, M
SCHMID, PE
LEGOUES, FK
HO, PS
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (19) : 2139 - 2142
[6] INFLUENCE OF INTERFACE QUALITY ON THE SCHOTTKY-BARRIER HEIGHT IN THE EPITAXIAL NI-SILICIDE SI(111) SYSTEM
LIEHR, M
SCHMID, PE
LEGOUES, FK
HO, PS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1190 - 1191
[7] LIEHR M, 1985, APR ECOSS 7 AIX PROV
[8] LIEHR M, UNPUB
[9] SCHOTTKY-BARRIER FORMATION AT PD, PT, AND NI/SI(111) INTERFACES
PURTELL, R
HOLLINGER, G
RUBLOFF, GW
HO, PS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 566 - 569
[10] SCHMID PE, 1985, HELV PHYS ACTA, V58, P371