SCHOTTKY-BARRIER HEIGHTS OF EPITAXIAL NI-SILICIDES ON SI(111)

被引：18

作者：

LIEHR, M

SCHMID, PE

LEGOUES, FK

HO, PS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573795

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：855 / 859

页数：5

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[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (19) : 1783 - 1786
[17] INTERFACE STATE MEASUREMENT OF EPITAXIAL AND NONEPITAXIAL NICKEL SILICIDE SCHOTTKY BARRIERS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1151 - 1152
[18] [No title captured]