INTERFACE STATE MEASUREMENT OF EPITAXIAL AND NONEPITAXIAL NICKEL SILICIDE SCHOTTKY BARRIERS

被引：5

作者：

WU, X ^{[1
]}

EVANS, HL ^{[1
]}

YANG, ES ^{[1
]}

LIEHR, M ^{[1
]}

HO, PS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1151 / 1152

页数：2

共 8 条

[1]

COHEN ML, 1980, ADV ELECTRON EL PHYS, V51, P1

[2] ACCURATE PHASE CAPACITANCE SPECTROSCOPY OF TRANSITION-METAL SILICON DIODES [J].

EVANS, HL ;

WU, X ;

YANG, ES ;

HO, PS .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :486-488

[3] CHEMICAL BONDING AND SCHOTTKY-BARRIER FORMATION AT TRANSITION-METAL SILICON INTERFACES [J].

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02) :745-756

[4] INFLUENCE OF INTERFACE QUALITY ON THE SCHOTTKY-BARRIER HEIGHT IN THE EPITAXIAL NI-SILICIDE SI(111) SYSTEM [J].

LIEHR, M ;

SCHMID, PE ;

LEGOUES, FK ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1190-1191

[5] MICROSCOPIC PROPERTIES AND BEHAVIOR OF SILICIDE INTERFACES [J].

RUBLOFF, GW .

SURFACE SCIENCE, 1983, 132 (1-3) :268-314

[6] THEORETICAL-MODELS OF SCHOTTKY BARRIERS [J].

SCHLUTER, M .

THIN SOLID FILMS, 1982, 93 (1-2) :3-19

[7] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J].

TUNG, RT ;

GIBSON, JM ;

POATE, JM .

PHYSICAL REVIEW LETTERS, 1983, 50 (06) :429-432

[8] SCHOTTKY-BARRIER FORMATION AT SINGLE-CRYSTAL METAL-SEMICONDUCTOR INTERFACES [J].

TUNG, RT .

PHYSICAL REVIEW LETTERS, 1984, 52 (06) :461-464

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