INFLUENCE OF INTERFACE QUALITY ON THE SCHOTTKY-BARRIER HEIGHT IN THE EPITAXIAL NI-SILICIDE SI(111) SYSTEM

被引：7

作者：

LIEHR, M

SCHMID, PE

LEGOUES, FK

HO, PS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1190 / 1191

页数：2

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[1] CLABES JG, UNPUB
[2] IWAMI M, 1980, J ELECTROCHEM SOC, V80, P102
[3] BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON
OTTAVIANI, G
TU, KN
MAYER, JW
[J]. PHYSICAL REVIEW B, 1981, 24 (06): : 3354 - 3359
[4] EFFECTS OF VARIATIONS OF SILICIDE CHARACTERISTICS ON THE SCHOTTKY-BARRIER HEIGHT OF SILICIDE-SILICON INTERFACES
SCHMID, PE
HO, PS
FOLL, H
TAN, TY
[J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4593 - 4601
[5] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES
TUNG, RT
GIBSON, JM
POATE, JM
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (06) : 429 - 432
[6] SCHOTTKY-BARRIER FORMATION AT SINGLE-CRYSTAL METAL-SEMICONDUCTOR INTERFACES
TUNG, RT
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (06) : 461 - 464