SCHOTTKY-BARRIER FORMATION AT PD, PT, AND NI/SI(111) INTERFACES

被引：30

作者：

PURTELL, R

HOLLINGER, G

RUBLOFF, GW

HO, PS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.571958

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：566 / 569

页数：4

共 17 条

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON
ALLEN, FG
GOBELI, GW
[J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &
[2] BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1105
[3] NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE
CHEUNG, NW
CULBERTSON, RJ
FELDMAN, LC
SILVERMAN, PJ
WEST, KW
MAYER, JW
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (02) : 120 - 124
[4] CHEUNG NW, 1981, PHYS REV LETT, V46, P71
[5] DETERMINATION OF SURFACE-STATES ON SI(111) BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY
CLABES, J
HENZLER, M
[J]. PHYSICAL REVIEW B, 1980, 21 (02): : 625 - 631
[6] THE FORMATION OF THE SCHOTTKY-BARRIER AT THE V/SI INTERFACE
CLABES, JG
RUBLOFF, GW
REIHL, B
PURTELL, RJ
HO, PS
ZARTNER, A
HIMPSEL, FJ
EASTMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 684 - 687
[7] PHOTOEMISSION STUDIES OF 2P CORE LEVELS OF PURE AND HEAVILY DOPED SILICON
EBERHARDT, W
KALKOFFEN, G
KUNZ, C
ASPNES, D
CARDONA, M
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 88 (01): : 135 - 143
[8] GRUTHANER PJ, 1980, J VAC SCI TECHNOL, V17, P924
[9] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
HIMPSEL, FJ
HEIMANN, P
CHIANG, TC
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[10] HIMPSEL FJ, COMMUNICATION