OPERATING LIMITS OF AL-ALLOYED HIGH-LOW JUNCTIONS FOR BSF SOLAR-CELLS

被引:50
作者
DELALAMO, J
EGUREN, J
LUQUE, A
机构
关键词
D O I
10.1016/0038-1101(81)90038-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:415 / 420
页数:6
相关论文
共 24 条
[1]  
Fang C. R., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P1318
[2]   IMPORTANCE OF SURFACE RECOMBINATION AND ENERGY-BANDGAP NARROWING IN P-N-JUNCTION SILICON SOLAR-CELLS [J].
FOSSUM, JG ;
LINDHOLM, FA ;
SHIBIB, MA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) :1294-1298
[3]  
Frisson L., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P590
[4]  
FRISSON L, 1980, COMMUNICATION MAR
[5]  
GODLEWSKI MP, 1973, 10TH P IEEE PHOT SPE, P40
[6]   SEMICONDUCTOR PROPERTIES OF RECRYSTALLIZED SILICON IN ALUMINUM ALLOY JUNCTION DIODES [J].
GUDMUNDSEN, RA ;
MASERJIAN, J .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) :1308-1316
[7]  
Iles P. A., 1975, 11th IEEE Photovoltaic Specialists Conference, P19
[8]   BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON [J].
LANYON, HPD ;
TUFT, RA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1014-1018
[9]   INFLUENCE OF BANDGAP NARROWING ON PERFORMANCE OF SILICON N-P SOLAR-CELLS [J].
LAUWERS, P ;
VANMEERBERGEN, J ;
BULTEEL, P ;
MERTENS, R ;
VANOVERSTRAETEN, R .
SOLID-STATE ELECTRONICS, 1978, 21 (05) :747-752
[10]   SOLAR-CELL BEHAVIOR UNDER VARIABLE SURFACE RECOMBINATION VELOCITY AND PROPOSAL OF A NOVEL STRUCTURE [J].
LUQUE, A ;
CUEVAS, A ;
EGUREN, J .
SOLID-STATE ELECTRONICS, 1978, 21 (05) :793-794