INFLUENCE OF BANDGAP NARROWING ON PERFORMANCE OF SILICON N-P SOLAR-CELLS

被引:34
作者
LAUWERS, P
VANMEERBERGEN, J
BULTEEL, P
MERTENS, R
VANOVERSTRAETEN, R
机构
关键词
D O I
10.1016/0038-1101(78)90007-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:747 / 752
页数:6
相关论文
共 18 条
[1]   AUGER-RECOMBINATION IN SI [J].
BECK, JD ;
CONRADT, R .
SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95
[2]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[4]   STUDY OF EFFICIENCY IN LOW RESISTIVITY SILICON SOLAR CELLS [J].
DUNBAR, PM ;
HAUSER, JR .
SOLID-STATE ELECTRONICS, 1976, 19 (02) :95-102
[5]   SURFACE RECOMBINATION IN SEMICONDUCTORS [J].
FITZGERALD, DJ ;
GROVE, AS .
SURFACE SCIENCE, 1968, 9 (02) :347-+
[6]  
FOSSUM JG, 1976, SOLID STATE ELECTRON, V19, P269, DOI 10.1016/0038-1101(76)90022-8
[7]  
GODLEWSKI MP, 1975, 11TH PHOT SPEC C PHO
[8]   RESISTIVITY DEPENDENCE OF SILICON SOLAR CELL EFFICIENCY AND ITS ENHANCEMENT USING A HEAVILY DOPED BACK CONTACT REGION [J].
GREEN, MA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (01) :11-16
[10]  
HEIMEIER H, 1977, SOLID STATE CIRCUITS, V12, P205