STUDY OF EFFICIENCY IN LOW RESISTIVITY SILICON SOLAR CELLS

[1] [Anonymous], 1971, SP8005 NASA

[2] BRANDHORST HW, 1973, 10TH C REC PHOT SPEC, P212

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] Davis E.M., 1958, J ELECTRON CONTR, V4, P17

[5] GODLEWSKI MP, 1973, 10TH P IEEE PHOT SPE, P40

[6] EFFECTS OF BASE DOPING AND WIDTH ON J-V CHARACTERISTICS OF N+-N-P+ STRUCTURE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 303 - &

[7] GRAHAM ED, 1970, THESIS NC STATE U

[8] OPTICAL PROPERTIES OF SILICON MONOXIDE IN THE WAVELENGTH REGION FROM 0.24 TO 14.0 MICRONS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1954, 44 (03) : 181 - 187

[9] MINORITY-CARRIER REFLECTING PROPERTIES OF SEMICONDUCTOR HIGH-LOW JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 715 - 716

[10] ILES PA, NAS317360 CONTR

[1] [Anonymous], 1971, SP8005 NASA

[2] BRANDHORST HW, 1973, 10TH C REC PHOT SPEC, P212

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] Davis E.M., 1958, J ELECTRON CONTR, V4, P17

[5] GODLEWSKI MP, 1973, 10TH P IEEE PHOT SPE, P40

[6] EFFECTS OF BASE DOPING AND WIDTH ON J-V CHARACTERISTICS OF N+-N-P+ STRUCTURE [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 303 - &

[7] GRAHAM ED, 1970, THESIS NC STATE U

[8] OPTICAL PROPERTIES OF SILICON MONOXIDE IN THE WAVELENGTH REGION FROM 0.24 TO 14.0 MICRONS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1954, 44 (03) : 181 - 187

[9] MINORITY-CARRIER REFLECTING PROPERTIES OF SEMICONDUCTOR HIGH-LOW JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 715 - 716

[10] ILES PA, NAS317360 CONTR